Mechanism of enhancement in electromagnetic properties of MgB2 by Nano SiC doping.

نویسندگان

  • S X Dou
  • O Shcherbakova
  • W K Yeoh
  • J H Kim
  • S Soltanian
  • X L Wang
  • C Senatore
  • R Flukiger
  • M Dhalle
  • O Husnjak
  • E Babic
چکیده

A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances H_{c2}, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in J_{c}. The irreversibility field (H_{irr}) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.

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عنوان ژورنال:
  • Physical review letters

دوره 98 9  شماره 

صفحات  -

تاریخ انتشار 2007